Process for fabricating a silicon-based thin-film

专利名称：Process for fabricating a silicon-based thin-film photovoltaic cell

发明人：Cedric Ducros,Frederic Sanchette,Christophe

Secouard

申请号：US12989311申请日：20090420公开号：US08288196B2公开日：20121016

专利附图：

摘要：A process for fabricating a silicon-based thin-film photovoltaic cell, applicablefor example in the energy generation field. The fabrication process includes a) depositing

a p-doped or n-doped amorphous silicon film, the X-ray diffraction spectrum of which hasa line centered at 28° that has a mid-height width, denoted by a, such that 4.7°≦a<6.0°, ona substrate.

申请人：Cedric Ducros,Frederic Sanchette,Christophe Secouard

地址：Bevenais FR,Montferrat FR,L'Isle Adam FR

国籍：FR,FR,FR

代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.

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