专利名称：Capacitor constructions
发明人：Cem Basceri,F. Daniel Gealy,Gurtej S. Sandhu申请号：US10704284申请日：20031106
公开号：US20040224467A1公开日：20041111
专利附图：
摘要：The invention includes methods in which metal oxide dielectric materials aredeposited over barrier layers. The barrier layers can comprise compositions of metal andone or more of carbon, boron and nitrogen, and the metal oxide of the dielectric materialcan comprise the same metal as the barrier layer. The dielectric material/barrier layer
constructions can be incorporated into capacitors. The capacitors can be used in, forexample, DRAM cells, which in turn can be used in electronic systems.
申请人：MICRON TECHNOLOGY, INC.
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