MITSUBISHI SEMICONDUCTORS M63994P/FP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGSSymbolVBVSVHOVCCVLOVINdVS/dtPtK qRth(j-c)TjToprTstgParameterHigh Side Floating Supply VoltageHigh Side Floating Supply Offset VoltageHigh Side Output VoltageLow Side Fixed Supply VoltageLow Side Output VoltageLogic Input VoltageAllowable Offset Supply Voltage TransientPackage Power DissipationLinear Derating FactorJunction-Case Thermal ResistanceJunction TemperatureOperation TemperatureStorage TemperatureOn Board, Ta = 25°COn Board, Ta > 25°CConditionsRatings–0.5~624VB–24 ~ VB+0.5VS–0.5 ~ VB+0.5–0.5 ~ 24VS ~ VCC+0.5–0.5 ~ VCC+0.5±500.85(P)/0.6(FP)8.5(P)/6.0(FP)40(P)/50(FP)–20 ~ +125–20 ~ +100–40 ~ +125UnitVVVVVVV/nsWmW/°C°C/W°C°C°CRECOMMENDED OPERATING CONDITIONSSymbolVBVSVCCVINParameterHigh Side Floating Supply VoltageHigh Side Floating Supply Offset VoltageLow Side Fixed Supply VoltageLogic Input VoltageTest ConditionsMin.VS+13.5–513.50LimitsTyp.————Max.VS+2050020VCCUnitVVVVTHERMAL DERATING FACTOR CHARACTERISTICS(ABSOLUTE MAXIMUM RATINGS)1.0On BoardPower Dissipation Pt (W)0.80.68 Lead DIP0.48 LeadSOP0.200255075100125Ambient Temperature Ta (°C)Sep. 2000 MITSUBISHI SEMICONDUCTORS M63994P/FP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS(=VB–VS)=15V, unless otherwise specified)SymbolIFSIBSICCVINHVINLVINHYSIINHIINLVBSUVRVBSUVTtVBSUVVCCUVRVCCUVTtVCCUVVOHVOLIOHIOLROHROLtDEADtdLHtdHLtrtfParameterFloating Supply Leakage CurrentVBS standby CurrentVCC standby CurrentHigh Level Input Threshold VoltageLow Level Input Threshold VoltageInput Hysteresis VoltageHigh Level Input Bias CurrentLow Level Input Bias CurrentVBS Supply UV Reset VoltageVBS Supply UV Trip VoltageVBS Supply Filter TimeVCC Supply UV Reset VoltageVCC Supply UV Trip VoltageVCC Supply Filter TimeHigh Level Output VoltageLow Level Output voltageOutput High Level Short Circuit Pulsed CurrentOutput Low Level Short Circuit Pulsed CurrentOutput High Level On ResistanceOutput Low Level On ResistanceDeadtime LO Turn-off to HO Turn-on& HO Turn-off to LO Turn-onOutput Turn-On Propagation DelayOutput Turn-Off Propagation DelayOutput Turn-On Rise TimeOutput Turn-On Fall TimeIO=0AIO=0AVO=0V, PW<10µsVO=15V, PW<10µsIO=200mA, ROH=(VOH-VO)/IOIO=200mA, ROL=VO/IOCL=1000pF between LO(HO) – GND(VS)CL=1000pF between LO(HO) – GND(VS)CL=1000pF between LO(HO) – GND(VS)CL=1000pF between LO(HO) – GND(VS)CL=1000pF between LO(HO) – GND(VS)VIN=15VVIN=0VTest conditionsVB=VS=600VMin.————————7.57.0—7.57.0—13.8—————0.500.70.2——LimitsTyp.—5005001165.075—8.58.07.58.58.07.514.4—–0.50.540200.751.00.37575Max.1.0750750———2001.09.59.0—9.59.0——0.1————1.001.30.4180180UnitµAµAµAVVVµAµAVVµsVVµsVVAAΩΩµsµsµsnsnsINPUT/OUTPUT TIMING DIAGRAMIN50%tftr50%tftr90%10%90%10%HOLOtdHL(LO)tdLH(HO)90%10%90%tDEAD(HO)tdHL(HO)tdLH(LO)10%tDEAD(LO)Sep. 2000 MITSUBISHI SEMICONDUCTORS M63994P/FP HIGH VOLTAGE HALF BRIDGE DRIVER PERFORMANCE CURVESICC-VCC, IBS-VBS0.90.80.7ICC, IBS (mA)VINH, VINL-VCC1816VINHICCVINH, VINL (V)141210864VINL0.60.5IBS0.40.30.20.181216VCC, VBS (V)2024281216VCC (V)2024tdHL, tdLH-VCC1.41.2tdHL, tdLH (µS)tdead-VCC1.11.0tdLH0.9tdead (µS)1.00.80.60.4tdHL0.281216VCC (V)20240.80.70.60.50.481216VCC (V)2024VOH-VCC25201510ILO=–20mA50ILO=–200mA81216VCC (V)20244.03.5ILO=0mA3.0VOL (V)VOL-VCCVOH (V)2.52.01.51.00.50812ILO=200mAILO=20mAILO=0mA16VCC (V)Sep. 2000 2024MITSUBISHI SEMICONDUCTORS M63994P/FP HIGH VOLTAGE HALF BRIDGE DRIVER IFS-Ta5040ICC, IBS (mA)0.80.70.6IFS (µA)3020100.50.40.30.202550751001250.1–50–250ICC, IBS-TaICCIBS0–50–25255075100125Ta (°C)Ta (°C)VCCUVT, VCCUVR-Ta9.59.08.58.07.567.0–50–2502550751001255–50–250VCCUVRVINH, VINL (V)1211VINH, VINL-TaVCCUVT, VCCUVR (V)VINH10987VINLVCCUVT255075100125Ta (°C)Ta (°C)tdHL, tdLH-Ta2.01.6tdHL, tdLH (µS)tdLH1.20.80.40–50–25tdead (µS)1.61.41.21.00.8tdHL02550751001250.60.4–50–25tdead-Ta0255075100125Ta (°C)Ta (°C)Sep. 2000 MITSUBISHI SEMICONDUCTORS M63994P/FP HIGH VOLTAGE HALF BRIDGE DRIVER VOH-Ta16ILO=0mA12ILO=–20mA465VOL-TaVOH (V)VOL (V)ILO=200mA8ILO=–200mA432ILO=20mA1ILO=0mA02550751001250–50–2502550751001250–50–25Ta (°C)Ta (°C)Sep. 2000 MITSUBISHI SEMICONDUCTORS M63994P/FP HIGH VOLTAGE HALF BRIDGE DRIVER LOGIC SEQUENCEVCCUVTRIPVCCVCCUVRESETdelay(tUV)VBSVBSUVTRIPdelay(tUV)INVBSUVRESETdelay(tUV)HOLO1. INPUT/OUTPUT LOGIC : HO has positive logic with reference to IN. LO has negative logic with reference to IN.2. LOGIC DURING UV(VCC, VBS)ERRORError SignalUV error(VCC)HOLOLO is locked at “L” level as long as UV error for VCC isHO outputs “L” level as long as UV error for VCC is detected.detected.After VCC exceeds VCCUVRESET level, the lock for LO isHO responds to IN if VCC exceeds VCCUVRESET level.removed following an “H” state of the IN signal, and then LOresponds to the input.HO is locked at “L” level as long as UV error for VBS is detected.After VBS exceeds VBSUVRESET level, the lock for HO isremoved following an “L” state of the IN signal, and then HOresponds to the input.UV error(VBS)LO is independent of VBS to respond to IN.Sep. 2000 MITSUBISHI SEMICONDUCTORS M63994P/FP HIGH VOLTAGE HALF BRIDGE DRIVER PACKAGE OUTLINE8P4EIAJ Package CodeDIP8-P-300-2.54JEDEC Code–Weight(g)0.5Lead MaterialCu AlloyPlastic 8pin 300mil DIP14DSymbolAA1A2bb1b2cDEee1LAA2e1Ec85Lb1beb28P2S-AEIAJ Package CodeSOP8-P-225-1.27JEDEC Code–Weight(g)0.07Lead MaterialCu AlloyA1SEATING PLANEDimension in MillimetersMinNomMax4.5––0.51––3.3––0.40.50.61.41.51.80.91.01.30.220.270.348.99.18.76.156.36.45–2.45––7.62––3.0–0°15°–Plastic 8pin 225mil SOPeb285HEEe1Recommended Mount PadFASymbolAA1A2bcDEeHELL1yb2e1I2Dimension in MillimetersMinNomMax––1.90.05–––1.5–0.350.40.50.130.150.24.85.05.24.24.44.6–1.27–5.96.26.50.20.40.6–0.9–––0.10°–10°–0.76––5.72–1.27––14DA2beyL1LA1cDetail FI2Sep. 2000 因篇幅问题不能全部显示，请点此查看更多更全内容