SENSOR DEVICE AND METHOD FOR MANUFACTURING SAME

专利名称：SENSOR DEVICE AND METHOD FOR

MANUFACTURING SAME

发明人：Masahiro NAKAMURA申请号：US15537699申请日：20160212

公开号：US20180006214A1公开日：20180104

专利附图：

摘要：The present invention relates to a sensor device which has high S/N andexcellent temperature characteristics. A sensor device has a semiconductor substrate, afirst metal wiring layer provided on the semiconductor substrate, a first insulating layer

provided on the first metal wiring layer, a compound semiconductor sensor elementprovided on the first insulating layer, a second metal wiring layer provided on thecompound semiconductor sensor element and the first insulating layer, and a secondinsulating layer provided on the second metal wiring layer. A third insulating layer isprovided between the first metal wiring layer and the second metal wiring layer, and thecompound semiconductor sensor element is provided in the third insulating layer.

申请人：ASAHI KASEI MICRODEVICES CORPORATION

地址：Tokyo JP

国籍：JP

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