2SJ295资料

Silicon P-Channel MOS FET

November 1996

Application

High speed power switching

Features

• • • • • •

Low on-resistanceHigh speed switchingLow drive current

4 V gate drive device can be driven from 5 V sourceSuitable for switching regulator, DC-DC converterAvalanche ratings

Outline

TO-220FMDG1231. Gate󰀀2. Drain󰀀3. SourceS2SJ295

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltageGate to source voltageDrain currentDrain peak current

Body to drain diode reverse drain currentAvalanche currentAvalanche energyChannel dissipationChannel temperatureStorage temperature

Notes1.PW ≤ 10 µs, duty cycle ≤ 1%

2.Value at TC = 25°C

3.Value at Tch = 25°C, Rg ≥ 50 Ω

SymbolVDSSVGSSIDID(pulse)*IDRIAP*

3321

Ratings–60±20–30–120–30–307735150–55 to +150

UnitVVAAAAmJW°C°C

EAR*Tch

Pch*Tstg

2

2SJ295

Electrical Characteristics (Ta = 25°C)

Item

Drain to source breakdownvoltage

Gate to source breakdownvoltage

Gate to source leak currentGate to source cutoff voltageStatic drain to source on stateresistance

Forward transfer admittanceInput capacitanceOutput capacitance

Reverse transfer capacitanceTurn-on delay timeRise time

Turn-off delay timeFall time

Body to drain diode forwardvoltage

Body to drain diode reverserecovery timeNote

1.Pulse test

|yfs|CissCossCrsstd(on)trtd(off)tfVDFtrr

SymbolMinV(BR)DSSV(BR)GSSIGSSVGS(off)RDS(on)

–60±20——–1.0——17—————————

Typ—————0.0330.045253300150048030170500390–1.5200

Max——±10–250–2.250.0430.06——————————

UnitVVµAµAVΩΩSpFpFpFnsnsnsnsVns

IF = –30 A, VGS = 0IF = –30 A, VGS = 0,diF/dt = 50 A/µsID = –15 A, VGS = –10 V,RL = 2 ΩTest conditionsID = –10 mA, VGS = 0IG = ±200 µA, VDS = 0VGS = ±16 V, VDS = 0VDS = –50 V, VGS = 0ID = –1 mA, VDS = –10 VID = –15 A, VGS = –10 V*ID = –15 A, VGS = –4 V*VDS = –10 V, VGS = 0,f = 1 MHz

111

Zero gate voltage drain currentIDSS

ID = –15 A, VDS = –10 V*

See characteristic curves of 2SJ280

3

2SJ295

60Channel Dissipation Pch (W)Power vs. Temperature Derating4020050100150Case Temperature Tc (°C)–500–300Drain Current I D ( A )–100–30–10–3–1Ta = 25 °C–1–3Maximum Safe Operation Area 󰀀Ois perlimatiiteon d bin y Rthis SD ( areona )DC Ope10 µ s0 µ1 m ss10s (1 shoPWratio 1 =n (T0 mc t)25°C)= –0.5–0.1–0.3–10–30–100Drain to Source Voltage V ( V )DS Normalized Transient Thermal Impedance γS (t)Normalized Transient Thermal Impedance vs. Pulse Width31.0D = 10.50.30.10.2TC = 25°C0.10.05θch–c (t) = γS (t) · θch–cθch–c = 3.57°C/W, TC = 25°CPDMsePul0.030.0110 µ0.020.01 hot1 ST1 m10 mPulse Width PW (s)100 mPW1D =PWT100 µ104

2SJ295

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